Patrick Desjardins
Professeur titulaire

Titulaire, Chaire de recherche du Canada en physique de la matière condensée
Regroupement québécois sur les matériaux de pointe (RQMP)
Groupe de recherche en physique et technologie des couches minces
Département de génie physique, patrick.desjardins@polymtl.ca

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Publications

Chapitres de livres

2.     M. Beaudoin, P. Desjardins, R.Y.-F. Yip et R.A. Masut, “Optical and structural properties of InAsP/In(Ga)P multilayers on InP(001): Multiple quantum well structures and devices” in InP and Related Compounds, Edité par M.O. Manasreh, Gordon and Breach Publishing Group, pp. 381-458 (2000).

1.     M. Meunier, P. Desjardins, R. Izquierdo, M. Tabbal et M. Suys, “Excimer laser for in situ processing in microelectronics” in Excimer Lasers : The tools, Fundamentals of their Interactions with Matter, Fields of Application, Edité par L.D. Laude, NATO ASI Series E: Applied Sciences vol. 265, pp. 319-338 (1994).

Publications dans des revues avec comité de lecture

80.   M. Chicoine, C. Beaudoin, S. Roorda, R.A. Masut et P. Desjardins, “III-V compliant substrates implemented by nanocavities introduced by ion implantation, J. Appl. Phys. (sous presse)

79.   N. Virgilio, B.D. Favis, M.-F. Pépin, P. Desjardins, G. L’Espérance, “High contrast imaging of interphases in ternary polymer blends using focused ion beam preparation and atomic force microscopy”, Macromolecules (2005)

78.   P.-L. Girard-Lauriault, F. Mwale, M. Iordanova, C. Demers, P. Desjardins et M.R. Wertheimer, “Atmospheric pressure deposition of micropatterned N-rich plasma-polymer films for tissue engineering”, Plasmas and Polymers 2, 263-270 (2005))

77.   K.A. Bratland, Y.L. Foo, T. Spila, H.-S. Seo, R.T. Haasch, P. Desjardins et J.E. Greene, “Sn-mediated Ge/Ge(001) growth by low-temperature molecular beam epitaxy: Surface smoothening and enhanced epitaxial thickness”, J. Appl. Phys. 97, 044904 (2005).

76.   A. Amassian, R. Verhnes, J.E. Klemberg-Sapieha, P. Desjardins et L. Martinu, Interface engineering during plasma-enhanced chemical vapor deposition of porous/dense SiN1.3 optical multilayers, Thin Solid Films 469-470, 47-53 (2004).

75.   N. Shtinkov, P. Desjardins, R.A. Masut et S.J. Vlaev, “Lateral confinement and band mixing in ultrathin semiconductor quantum wells with step-like interfaces”, Phys. Rev. B 70, 155302 (2005)

74.   G. Bentoumi, V. Timoshevskii, N. Madini, M. Côté, R. Leonelli, J.-N. Beaudry, P. Desjardins et R.A. Masut, “Evidence for large configuration-induced band gap fluctuations in GaAsN alloys”, Phys. Rev. B 70, 035315 (2004).

73.   N. Shtinkov, S. Turcotte, J.-N. Beaudry, P. Desjardins et R.A. Masut, “Electronic and optical properties of GaAsN/GaAs quantum wells: A tight-binding study”, J. Vac. Sci. Technol. A 22, 1606 (2004).

72.   J. F. Girard, C. Dion, C. Nì Allen, S. Raymond, P.J. Poole et P. Desjardins, “Tuning of Electronic Properties of Self-Assembled InAs/InP(001) Quantum Dots by Rapid Thermal Annealing”, Appl. Phys. Lett. 84, 3382-3384 (2004).

71.   J-N. Beaudry, R.A. Masut, P. Desjardins, P. Wei, M. Chicoine, G. Bentoumi, R. Leonelli et F. Schiettekatte, “Organometallic vapor phase epitaxy of GaAs1‑xNx alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation”, J. Vac. Sci. Technol. 22, 771-775 (2004).

70.   S. Turcotte, N. Shtinkov, P. Desjardins, R.A. Masut et R. Leonelli, “Empirical tight-binding calculations of the electronic structure of dilute III-V-N semiconductor alloys”, J. Vac. Sci. Technol. A 22, 776-780 (2004).

69.   P. Wei, M. Chicoine, F. Schiettekatte, J.-N. Beaudry, R.A. Masut et P. Desjardins, “Characterization of GaAs1‑xNx epitaxial layers by ion beam analysis”, J. Vac. Sci. Technol. 22, 908-911 (2004).

68.   A. Amassian, P. Desjardins et L. Martinu, “Study of TiO2 film growth mechanism in low-pressure plasma by in situ real-time spectroscopic ellipsometry”, Thin Solid Films 447-448, 40-45 (2004).

67.   M. Chicoine, S. Roorda, R.A. Masut et P. Desjardins, “Nanocavities in He implanted InP”, J. Appl. Phys. 94, 6116-6121 (2003).

66.   L. Malikova, F.H. Pollak, R.A. Masut, P. Desjardins et L.G. Mourokh, “Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure”, J. Appl. Phys. 94, 4995-4998 (2003).

65.   K.A. Bratland, Y.L. Foo, P. Desjardins et J.E. Greene, “Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular beam epitaxy”, Appl. Phys. Lett. 82, 4249 (2003).

64.   N. Shtinkov, P. Desjardins et R.A. Masut, “Lateral confinement of carriers in ultrathin semiconductor quantum wells”, Microelectronics J. 34, 459-462 (2003).

63.   N. Shtinkov, P. Desjardins et R. A. Masut, “Empirical tight-binding model for the electronic structure of dilute GaNAs alloys”, Phys. Rev. B 67, 081202 (2003).

62.   K.A. Bratland, Y.L. Foo, J.A.N.T. Soares, T. Spila, P. Desjardins et J.E. Greene, “Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy”, Phys. Rev. B 67, 125322 (2003).

61.   T. Spila, P. Desjardins, J. D’Arcy-Gall, R.D. Twesten et J. E. Greene, “Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1-xGex/Si(001) growth from hydride precursors”, J. Appl. Phys. 93, 1918-1925 (2003).

60.   Y.L. Foo, K.A. Bratland, B. Cho, P. Desjardins et J.E. Greene, “Si1-yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: surface reaction paths and growth kinetics”, J. Appl. Phys., 93, 3944-3950 (2003).

59.   N. Shtinkov, P. Desjardins et R.A. Masut, “Electronic states of ultrathin in InAs/InP (001) quantum wells: A tight-binding study of the effects of band offset, strain, and intermixing”, Phys. Rev. B 66, 195303 (2002).

58.   A. Tchebotareva, J.L. Brebner, S. Roorda, P. Desjardins et C.W. White, “Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix”, J. Appl. Phys. 92, 4664-4671 (2002).

57.   Y.L. Foo, K.A. Bratland, B. Cho, J.A.N.T. Soares, P. Desjardins et J.E. Greene, “C incorporation and segregation during Si1-yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3”, Surf. Sci., 513, 475-484 (2002).

56.   S.Y. Park, J. D’Arcy-Gall, D. Gall, J.A.N.T. Soares, Y.-W. Kim, H., Kim, P. Desjardins et J.E. Greene, “Carbon incorporation pathways and lattice sites in Si1-yCy alloys grown on Si(001) by molecular beam epitaxy”, J. Appl. Phys., 91, 5716-5727 (2002).

55.   S.Y. Park, J. D’Arcy-Gall, D. Gall, Y.‑W. Kim, P. Desjardins et J.E. Greene, “C Lattice site distributions in metastable Ge1‑yCy alloys grown on Ge(001) by molecular beam epitaxy”, J. Appl. Phys., 91, 3644-3652 (2002).

54.   T. Spila, P. Desjardins, A. Vailionis, H. Kim, N. Taylor, D.G. Cahill, J.E. Greene, S. Guillon et R.A. Masut, “Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001)” J. Appl. Phys. 91, 3579-3588 (2002).

53.   H. Kim, G. Glass, J.A.N.T. Soares, P. Desjardins et J. E. Greene, “Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation”, Appl. Phys. Lett. 79, 3263-3265 (2001).

52.   J. D’Arcy-Gall, D. Gall, I. Petrov, P. Desjardins et J.E. Greene, “Quantitative C lattice site distributions in epitaxial Ge1-yCy/Ge(001) layers”, J. Appl. Phys 90, 3910-3918 (2001).

51.   J.-S. Chun, P. Desjardins, C. Lavoie, I. Petrov, C. Cabral Jr. et J.E. Greene, “Interfacial reaction pathways and kinetics during annealing of 111-textured Al/TiN bilayers: A synchrotron x-ray diffraction and transmission electron microscopy study”, J. Vac. Sci. Technol. A 19, 2207-2216 (2001).

50.   C.‑S. Shin, D. Gall, Y.‑W. Kim, P. Desjardins, I. Petrov, J.E. Greene, M. Odén et L. Hultman, “Epitaxial NaCl-structure d-TaNx(001): Electronic transport properties, elastic modulus, and hardness vs N/Ta ratio”, J. Appl. Phys. 90, 2879-2895 (2001).

49.   S. Kodambaka, V. Petrova, A. Vailionis, P. Desjardins, D. G. Cahill, I. Petrov et J. E. Greene, “TiN(001) and TiN(111) island coarsening kinetics: In-situ scanning tunneling microscopy studies”, Thin Solid Films 392, 164-168 (2001).

48.   J.-S. Chun, P. Desjardins, I. Petrov, J.E. Greene, C. Lavoie et C. Cabral Jr., “Interfacial reaction pathways and kinetics during annealing of epitaxial Al(001)/TiN(001) model diffusion barrier systems”, Thin Solid Films 391, 69‑80 (2001).

47.   J.-S. Chun, P. Desjardins, C. Lavoie, C.-S. Shin, C. Cabral Jr., I. Petrov et J.E. Greene, “Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AlN(0001) blocking layer”, J. Appl. Phys. 89, 7841-7845 (2001).

46.   D. Gall, M. Städele, K. Järrendahl, I. Petrov, P. Desjardins, R.T. Haasch, T.-Y. Lee et J.E. Greene, “Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculations”, Phys. Rev. B 63, 125119 (2001).

45.   T. Veres, M. Cai, R.W. Cochrane, M. Rouabhi, S. Roorda et P. Desjardins, “MeV Si+ irradiation of Ni/Fe multilayers : Structural, transport, and magnetic properties”, Thin Solid Films 382, 172-182 (2001).

44.   T. Veres, P. Desjardins, M. Cai, R.W. Cochrane, M. Rouabhi, R. Abdouche et M. Sutton “MeV Si+ irradiation of Fe/Ni bilayers : Influence of microstructural changes and interfacial reactions on magnetic properties”, Thin Solid Films 382, 164-171 (2001).

43.   J.-S. Chun, J.R.A. Carlsson, P. Desjardins, D.B. Bergstrom, I. Petrov, J.E. Greene, C. Lavoie, C. Cabral Jr. et L. Hultman, “Synchrotron x-ray diffraction studies of interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN Bilayers”, J. Vac. Sci. Technol. A 19, 182-191 (2001).

42.   H. Kim, G. Glass, P. Desjardins et J.E. Greene, “Ultra-highly doped Si1‑xGex(001):B gas-source molecular beam epitaxy: Boron surface segregation and its effect on film growth kinetics”, J. Appl. Phys. 89, 194-205 (2001).

41.   H. Kim, G. Glass, J.A.N.T. Soares, P. Desjardins, et J.E. Greene, “Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film growth kinetics”, J. Appl. Phys. 88, 7067-7078 (2000).

40.   A. Vailionis, B. Cho, G. Glass, P. Desjardins, D.G. Cahill et J.E. Greene, “Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001)”, Phys. Rev. Lett. 85, 3672-3675 (2000).

39.   S. Kodambaka, V. Petrova, A. Vailionis, P. Desjardins, D.G. Cahill, I. Petrov et J.E. Greene, “In-situ high-temperature scanning tunneling microscopy studies of two-dimensional island decay kinetics on atomically flat smooth TiN(001)”, Surf. Rev. Lett. 7, 589-593 (2000).

38.   J. D’Arcy-Gall, D. Gall, P. Desjardins, I. Petrov et P. Desjardins “Role of fast sputtered particles during sputter deposition: Growth of epitaxial Ge0.99C0.01/Ge(001)”, Phys. Rev. B 62, 11203-11208 (2000).

37.   J. D’Arcy-Gall, P. Desjardins, I. Petrov, J.E. Greene, J.-E. Paultre, R.A. Masut, S.C. Gujrathi et S. Roorda, “Epitaxial metastable Ge1-yCy (y £ 0.02) alloys grown on Ge(001) from hyperthermal beams : C incorporation and lattice sites”, J. Appl. Phys. 88, 96-104 (2000).

36.   N. Taylor, H. Kim, P. Desjardins, Y.L. Foo et J.E. Greene, “Si(001)16x2 gas-source molecular-beam epitaxy : Growth kinetics”, Appl. Phys. Lett. 76, 2853-2855 (2000).

35.   G. Glass, H. Kim, P. Desjardins, N. Taylor, T. Spila, Q. Lu et J.E. Greene, “Ultra-high B doping (£ 1022 cm‑3) during Si(001) gas-source molecular-beam epitaxy : B incorporation, electrical activation, and hole transport”, Phys. Rev. B 61, 7628-7644 (2000).

34.   M. Beaudoin, P. Desjardins, A. Aït-Ouali, J.L. Brebner, R.Y.-F. Yip, H. Marchand, L. Isnard et R.A. Masut, “Optical properties and heterojunction band alignment in fully-coherent strain-compensated InAsxP1‑x/GayIn1‑yP multilayers on InP(001)”, J. Appl. Phys. 87, 2320-2326 (2000).

33.   P. Desjardins, T. Spila, O. Gurdal, N. Taylor et J.E. Greene, “Hybrid surface roughening modes during low-temperature heteroepitaxy : Growth of fully-strained metastable Ge1-xSnx alloys on Ge(001)2x1”, Phys. Rev. B 60, 15993-15998 (1999).

32.   C.-S. Shin, D. Gall, P. Desjardins, A. Vailionis, H. Kim, I. Petrov, J.E Greene et M. Odén, “Growth and physical properties of epitaxial metastable cubic TaN(001)”, Appl. Phys. Lett. 24, 3808-3810 (1999).

31.   D. Gall, I. Petrov, P. Desjardins et J.E. Greene, “Microstructural evolution and Poisson ratio of epitaxial ScN grown on TiN/MgO(001) by ultra-high vacuum reactive magnetron sputter deposition”, J. Appl. Phys. 86, 5524-5529 (1999).

30.   A. Vailionis, G. Glass, P. Desjardins, D.G. Cahill et J.E. Greene, “Electrically active and inactive B lattice sites in ultra-highly B doped Si(001): An x-ray near-edge fine-structure and high-resolution diffraction study”, Phys. Rev. Lett. 82, 4464-4467 (1999).

29.   J.A.N.T. Soares, H. Kim, G. Glass, P. Desjardins et J.E. Greene, “Arsenic-doped Si(001) gas-source molecular-beam epitaxy : Growth kinetics and transport properties”, Appl. Phys. Lett. 74, 1290-1292 (1999).

28.   N. Taylor, H. Kim, T. Spila, J.A. Eades, G. Glass, P. Desjardins et J.E. Greene, “Growth of Si1‑xGex(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transformations”, J. Appl. Phys. 85, 501-511 (1999).

27.   M. Rojas-López, H. Navarro-Contreras, P. Desjardins, O. Gurdal, N. Taylor, J.R.A. Carlsson et J.E. Greene, “Raman scattering from fully-strained Ge1-xSnx (x £ 0.22) alloys grown on Ge(001)2x1 by low-temperature molecular beam epitaxy”, J. Appl. Phys. 84, 2219-2223 (1998).

26.   H. Kim, P. Desjardins, J.R. Abelson et J.E. Greene, “Pathways for hydrogen desorption from Si1‑xGex(001) during gas-source molecular-beam epitaxy and ultra-high vacuum chemical vapor deposition”, Phys. Rev. B 58, 4803-4808 (1998).

25.   S.C. Gujrathi, S. Roorda, J.G. D’Arcy, R.J. Pflueger, P. Desjardins, I. Petrov, et J.E. Greene, “Quantitative compositional depth profiling of Si1-x-yGexCy thin films by simultaneous elastic recoil detection and Rutherford backscattering spectrometry”, Nucl. Instrum. Meth. B 136‑138, 654-660 (1998).

24.   S. Guillon, R.Y-F. Yip, P. Desjardins, M. Chicoine, Z. Bougrioua, M. Beaudoin, A. Aït-Ouali et R.A. Masut, “Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001)”, J. Vac. Sci. Technol. A 16, 781-785 (1998).

23.   R.Y-F. Yip, P. Desjardins, A. Aït-Ouali, L. Isnard, H. Marchand, A. Bensaada, J.L. Brebner, J.F. Currie et R.A. Masut, “Band alignment and barrier height considerations for the quantum-confined Stark effect”, J. Vac. Sci. Technol. A 16, 801-804 (1998).

22.   P. Desjardins, L. Isnard, H. Marchand et R.A. Masut, “Competing strain-relaxation mechanisms in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001)”, J. Vac. Sci. Technol. A 16, 776-780 (1998).

21.   R.Y-F. Yip, P. Desjardins, L. Isnard, A. Aït-Ouali, H. Marchand, J.L. Brebner, J.F. Currie et R.A. Masut, “Band alignment engineering for high-speed, low drive field quantum confined Stark effect devices”, J. Appl. Phys. 83, 1758-1769 (1998).

20.   O. Gurdal, P. Desjardins, J.R.A. Carlsson, N. Taylor, H.H. Radamson, J.‑E. Sundgren et J.E. Greene, “Low temperature growth and critical epitaxial thicknesses of fully-strained metastable Ge1-xSnx alloys on Ge(001)2´1”, J. Appl. Phys. 83, 162-170 (1998).

19.   B.W. Karr, I. Petrov, P. Desjardins, D.G. Cahill et J.E. Greene, “In-situ scanning tunneling microscopy studies of the evolution of surface morphology and microstructure in epitaxial TiN(001) grown by ultra-high-vacuum reactive magnetron sputtering”, Surf. Coatings Technol. 94-95, 403-408 (1997).

18.   H. Marchand, P. Desjardins, T.S. Guillon, J.-E. Paultre, Z. Bougrioua, R. Y.-F. Yip et R.A. Masut, “Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized islands on InP(001)”, J. Electron. Mater. 26, 1205-1213 (1997).

17.   H. Marchand, P. Desjardins, S. Guillon, J.‑E. Paultre, Z. Bougrioua, R.Y.‑F. Yip et R.A. Masut, “Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)”, Appl. Phys. Lett. 71, 527-529 (1997).

16.   M. Meunier, R. Izquierdo, M. Tabbal, S. Evoy, P. Desjardins, M.-H. Bernier, J. Bertomeu, N. Elyaagoubi, M. Suys, E. Sacher et A. Yelon, “Laser induced deposition of tungsten and copper”, Mater. Sci. Eng. B 45, 200-207 (1997).

15.   Y. Ababou, P. Desjardins, A. Chennouf, M. Beaudoin, A. Bensaada, R.A. Masut, A. Yelon, R. Leonelli et G. L’Espérance, “Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metal-organic vapor phase epitaxy using tertiarybutylarsine”, Semicond. Sci. Technol. 12, 550-554 (1997).

14.   P. Desjardins, H. Marchand, L. Isnard et R.A. Masut, “Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001)”, J. Appl. Phys. 81, 3501-3511 (1997).

13.   R.Y.-F. Yip, A. Aït-Ouali, A. Bensaada, P. Desjardins, M. Beaudoin, L. Isnard, J.L. Brebner, J.F. Currie et R.A. Masut, “Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metalorganic vapor phase epitaxy”, J. Appl. Phys. 81, 1905-1915 (1997).

12.   Y. Ababou, P. Desjardins, A. Chennouf, R. Leonelli, D. Hetherington, A. Yelon, G. L’Espérance, et R.A. Masut, “Structural and optical characterization of InP grown on Si(111) by metalorganic vapor phase epitaxy using thermal cycle growth”, J. Appl. Phys. 80, 4997-5005 (1996).

11.   P. Desjardins, M. Beaudoin, R. Leonelli, R.A. Masut et G. L’Espérance, “Structural and optical properties of strain relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine”, J. Appl. Phys. 80, 846-852 (1996).

10.   P. Desjardins et J.E. Greene, “Step-flow epitaxial growth on two-domain surfaces”, J. Appl. Phys. 79, 1423-1434 (1996).

9.     Y. Ababou, P. Desjardins, R.A. Masut, A. Yelon et G. L’Espérance, “Metalorganic vapor phase epitaxy and structural characterization of InP on Si(111)”, Can. J. Phys. 74 (suppl. 1), S108-S111 (1996).

8.     M. Beaudoin, A. Bensaada, R. Leonelli, P. Desjardins, R.A. Masut, L. Isnard, A. Chennouf et G. L’Espérance, “Self-consistent determination of the band offsets in InAsxP1-x/InP strained layer quantum wells and the bowing parameter of bulk InAsxP1-x”, Phys. Rev. B 53, 1990-1996 (1996).

7.     M. Meunier, P. Desjardins, M. Tabbal, N. Elyaagoubi, R. Izquierdo, et A. Yelon. “Laser processing of tungsten from WF6 and SiH4”, Appl. Surf. Sci. 86, 475-483 (1995).

6.     P. Desjardins, R. Izquierdo et M. Meunier, “Diode laser induced chemical vapor deposition of WSix on TiN from WF6 and SiH4”, J. Appl. Phys. 73, 5216-5221 (1993).

5.     P. Desjardins, R. Izquierdo et M. Meunier, “Dépôt par laser de WSix sur du TiN à partir de WF6 et de SiH4”, Can. J. Phys. 70, 898-903 (1992).

4.     M. Meunier, R. Izquierdo, P. Desjardins, M. Tabbal, A. Lecours et A. Yelon, “Laser direct writing of W from WF6”, Thin Solid Films, 218, 137-143 (1992) (article sur invitation).

3.     M. Meunier, C. Lavoie, S. Boivin, R. Izquierdo et P. Desjardins, “Modeling KrF excimer laser induced deposition of titanium tetrachloride”, Appl. Surf. Sci. 54, 52-55 (1992).

2.     C. Lavoie, M. Meunier, R. Izquierdo, S. Boivin et P. Desjardins, “Large area excimer laser deposition of titanium from titanium tetrachloride”, Appl. Phys. A, 53, 339-342 (1991).

1.     C. Lavoie, M. Meunier, S. Boivin, R. Izquierdo et P. Desjardins, “Profile of titanium lines produced by excimer laser direct writing on lithium niobate”, J. Appl. Phys. 70, 2343-2347 (1991).

Publications dans des compte rendus de conférence avec arbitrage

12.   C. Coïa, C. Lavoie, F. M. d’Heurle, C. Detavernier, P. Desjardins, A.J. Kellock, “Reactive diffusion in the Ni-Si system: Influence of Ni thickness on the phase formation sequence”, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, Electrochemical Society Symposium Proceedings (2005)

11.   C. Lavoie, C. Coia, F. M. d’Heurle, C. Detavernier, C. Cabral, Jr., P. Desjardins et A.J. Kellock “Reactive diffusion in the Ni-Si system: phase sequence and formation of metal-rich phases” Sixth International Conference on Diffusion in Materials, 18 - 23 Juillet 2004, Kracovie, Pologne, Defect and Diffusion Forum, Trans Tech Publications Ltd, Uetikon, Switzerland.

10.   P.-L. Girard-Lauriault, F. Mwale, M. Iordanova, P. Desjardins et M.R. Wertheimer, “Atmospheric pressure deposition of micropatterned N-rich plasma-polymer films for tissue engineering”, Ninth International Symposium on High Pressure, Low Temperature Plasma Chemistry (Hakone IX), Padova, Italy (23-26 Août 2004).

9.     N. Shtinkov, P. Desjardins et R.A. Masut, “Localized and extended states in semiconductor quantum wells with wire-like interfaces”, 27th International Conference on the Physics of Semiconductors, American Institute of Physics, Flagstaff, AZ, U.S.A., July 26‑30, 2004, J. Menéndez and C.G. Van de Walle, (Editors) (sous presse)

8.     O. Duval, L.-P. Lafrance, Y. Savaria et P. Desjardins, “An integrated test platform for nanostructure electrical characterization”, International conference on MEMS, NANO, and smart systems, 25-27 août 2004, Banff, Canada, Proceedings of 2004 International Conference on MEMS, Nano and Smart Materials, pp 237‑242 (ISBN 0‑7695‑2189‑4)

7.     R. Taillefer, P. Desjardins et F. Schiettekatte, “A Finite Element Model of Ultra-Sensitive Thin Film Calorimeters for the Study of Size‑Dependent Thermodynamical Properties of Materials at the Nanoscale”, 2nd North East Workshop on Circuits & Systems - NEWCAS, Montréal (20-23 juin 2003)

6.     C. Lavoie, R. Purtell, C. Coïa, C. Detavernier, P. Desjardins, J. Jordan-Sweet, C. Cabral, Jr., F.M. d’Heurle, J.M.E. Harper, “In situ monitoring of thin film reactions during rapid thermal annealing : nickel silicide formation”, Rapid Thermal and Other Short-Time Processing Technologies III, P. Timans, E. Gusev, F. Roozeboom, M. Ozturk, et D.L. Kwong (Editeurs), Electrochemical Society PV 2002‑11, 455‑468 (2002) (ISBN 1‑56677‑334‑2).

5.     S. Raymond, D. Labrie, J.-F. Girard, S. Poirier, S. Awirothananon, P.J. Poole, H. Marchand, P. Desjardins et R.A. Masut, “Tuning of the electronic properties of self-assembled InAs/InP quantum dots by rapid thermal annealing”, Symposium J: Semiconductor quantum dots, Mat. Res. Soc. Symp. Proc., 642, J9.6.1‑J9.6.6 (2001).

4.     M. Beaudoin, R.A. Masut, L. Isnard, P. Desjardins, A. Bensaada, G. L'Espérance et R. Leonelli, “Band offsets of InAsxP1-x/InP strained layer quantum wells grown by LP-MOVPE using TBAs”, Mat. Res. Soc. Symp. Proc., 358, 1005‑1010 (1995).

3.     R. Izquierdo, P. Desjardins, N. Elyaagoubi et M. Meunier, “Laser-assisted low temperature deposition of WSix from WF6 and SiH4”, Mat. Res. Soc. Symp. Proc., vol. 282, 209-214 (1993).

2.     P. Desjardins, R. Izquierdo et M. Meunier, “Diode laser induced chemical vapor deposition of WSix from WF6 and SiH4 on TiN”, Mat. Res. Soc. Symp. Proc., vol. 236, 127-132 (1992).

1.     M. Meunier, C. Lavoie, S. Boivin, R. Izquierdo, P. Desjardins et S.I. Najafi, “KrF excimer laser direct writing of titanium lines: Modeling and application to the fabrication of Ti:LiNbO3 waveguides”, Mat. Res. Soc. Symp. Proc., vol. 201, pp. 625-630 (1991).

Publications dans des compte rendus de conférence sans arbitrage

10.   A. Amassian, R. Vernhes, J.E. Klemberg-Sapieha, P. Desjardins et L. Martinu, “Study of the growth and interface engineering of dense/porous SiN1.3 optical coatings by real-time spectroscopic ellipsometry”, in Optical Interference Coatings on CD-ROM, The Optical Society of America, Washington, DC, MF3 (2004).

9.     A. Amassian, P. Desjardins et L. Martinu, “Dynamics of surface modifications during optical coating deposition in plasma-assisted processes”, in Optical Interference Coatings on CD-ROM, The Optical Society of America, Washington, DC, TuE9 (2004).

8.     A. Amassian, R. Vernhes, J. E. Klemberg-Sapieha, P. Desjardins et L. Martinu, “Interface engineering of porous/dense multilayers of SiN1.3: In situ real-time spectroscopic ellipsometry study”, Proceedings of the 47th Annual Technical Conference, Society of Vacuum Coaters, 2004.

7.     A. Amassian, S. Larouche, J.E. Klemberg-Sapieha, P. Desjardins et L. Martinu, “In situ ellipsometric study of the initial growth stages of a-TiO2 by PECVD”, Proceedings of the 45th Annual Technical Conference of Society of Vacuum Coaters, p.250-255 (2002).

6.     A. Amassian, S. Larouche, R. Vernhes, J.E. Klemberg-Sapieha, P. Desjardins et L.Martinu, “Analysis and control of optical film growth by in situ real-time spectroscopic ellipsometry”, OPTO-Canada: SPIE Regional Meeting on Optoelectronic, Photonics, and Imaging, Ottawa, Canada (9-10 mai 2002) TD-01, 493-495.

5.     N. Taylor, T. Spila, P. Desjardins et J.E. Greene, “Si1-xGex (011): Growth Kinetics, Strain, and Surface Morphological Evolution”, TechCon 1998, Las Vegas, Nevada, 9-11 septembre 1998.

4.     S. Fafard, J. McCaffrey, Y. Feng, C.N. Allen, H. Marchand, L. Isnard, P. Desjardins, S. Guillon et R.A. Masut, “Quantum dot laser diodes emitting at 1.5 µm”, International Conference on Applications of Photonics Technology (SPIE), Ottawa, Canada, 27-30 juillet 1998.

3.     Y. Ababou, P. Desjardins, A. Chennouf, R.A. Masut, A. Yelon, R. Leonelli et G. L’Espérance, “Growth of strain-balanced GaInP/InAsP MQW by LP-MOVPE”, 6th European Workshop on MOVPE and Related Techniques, Gent, Belgique, 25-28 juin 1995.

2.     A. Bensaada, M. Suys, M. Beaudoin, P. Desjardins, L. Isnard, A. Aït-Ouali, R.A. Masut, R.W. Cochrane, J.F. Currie et G. L’Espérance, “LP-MOVPE growth and characterization of InxGa1‑xAs/InP epilayers and multiple quantum wells using tertiarybutylarsine”, 6th European Workshop on MOVPE and Related Techniques, Gent, Belgique, 25-28 juin 1995.

1.     S. Evoy, M.-H. Bernier, P. Desjardins, R. Izquierdo, M. Meunier et E. Sacher, “Diode laser induced pyrolytic decomposition of spin-coated organometallic thin films” Laser-Assisted Fabrication of Thin Films and Microstructures, Edité par Ian W. Boyd, SPIE Proc., vol. 2045, pp. 63-70 (1994).

Conférences

134. (sur invitation) P. Desjardins, Canadian Semiconductor Technology Conference, “In situ monitoring of thin film growth and interfacial reactions”, Ottawa (16-19 août 2005)

133. P. Wei, M. Guihard, F. Schiettekatte, J.-N. Beaudry, P. Desjardins et R.A. Masut, “Investigating dilute nitride semiconductors by ion beam analysis”, 17th Conference on Ion Beam Analysis, Seville, Espagne (26 juin – 1er juillet 2005)

132. C. Nì. Allen, C. Dion, S. Raymond, P. J. Poole, P. Barrios, A. Bezinger, G. Ortner, G. Pakulski, W. Render, M. Chicoine, F. Schiettekatte, P. Desjardins et S. Fafard, “Inhomogeneous Broadening In Quantum Dot Layers: Expanding Towards Broadband Sources”, 13th International Symposium on Nanostructures : Physics and Technology, SaintPetersbourg, Russie (20-25 juin 2005)

131. A. Lévesque, R.A. Masut et P. Desjardins, “ Three-dimensional self-organization of self-assembled InAs/InP(001) quantum dot multilayers: Transition from aligned to anti-aligned structures”, Electronic Materials Conference, Santa Barbara (22-24 juin 2005)

130. A. Amassian, M. Svec, P. Desjardins, and L. Martinu “Role of Ion-Mixing and Subplantation on Interface Broadening in Plasma-Assisted Deposition Environment”, Symposium on Functional Coatings and Surface Engineering, Montréal, Canada (5-8 juin 2005)

129. (sur invitation) C. Lavoie, C. Coia, S. Gaudet, M. Tremblay, C. Detavernier et P. Desjardins, “ Silicides and germanides for advanced microelectronic devices ”, Symposium on Functional Coatings and Surface Engineering, Montréal, Canada (5-8 juin 2005)

128. M. Chicoine, S. Roorda, P. Desjardins et R.A. Masut, “Ion implantation of nanocavities in InP to implement compliant substrates”, E-MRS GaMnP, European Materials Research Society, 2005 Spring Meeting, Strasbourg, France (31 mai – 3 juin 2005)

127. C. Lavoie, C. Coïa, F.M. d’Heurle, C. Detavernier, P. Desjardins, and A.J. Kellock, “Reactive diffusion in the Ni-Si system: Influence of Ni thickness on the phase formation sequence”, 207th Meeting of the Electrochemical Society, Québec, QC, Canada (15‑20 Mai 2005)

126. S. Lambert-Milot, M. Garcia Hernandez, A. de Andres, C. Lacroix, P. Desjardins, D. Ménard er R.A. Masut, “Mn incorporation and magnetic properties of Ga1-xMnxP films grown on GaP(001)”, E-MRS GaMnP, European Materials Research Society, 2005 Spring Meeting, Strasbourg, France (31 mai – 3 juin 2005).

125. A. Amassian, P. Desjardins, L. Martinu, “Effects of low-energy ion bombardment on interface formation and thin film growth in a plasma-CVD environment” International Conference on Metallurgical Coatings And Thin Films - ICMCTF 2005, San Diego, California (2-6 mai 2005)

124. A. Amassian, P. Desjardins, L. Martinu, “Influence of low-energy ion bombardment enegry on interface formation and thin film growth in a plasma-CVD environment”, 48th Annual SVC Conference and Smart Materials Symposium Denver (23-28 Avril 2005)

123. A. Amassian, P. Desjardins, L. Martinu, “Low-to-Medium Energy Ion Bombardment Effects on Interface Formation During Thin Film Growth in Plasma-CVD Environment”, Materials Research Society Spring Meeting, Symposium A: Amorphous and Nanocrystalline Silicon Science and Technology, San Francisco, Californie (28 mars – 1er avril 2005)

122. A. Amassian, R. Vernhes, J.E. Klemberg-Sapieha, P. Desjardins, et L. Martinu, “Interface engineering for improved growth and microstructural control of dense/porous multilayers”, Materials Research Society Spring Meeting, Symposium Q: Smart surfaces and interfaces, San Francisco, Californie (28 mars – 1er avril 2005)

121. M. Chicoine, S. Roorda, P. Desjardins et R.A. Masut, “He ion implantation of nanocavities in InP(001): A novel method to obtain III-V compliant substrates”, New Opportunities in Materials Science: from nano-objects to complex materials, Madrid, Espagne (16-17 février 2005)

120. C. Dion, N. Shtinkov, S. Raymond, M. Chicoine, F. Schiettekatte, P.J. Poole, R.A. Masut et P. Desjardins, “Tuning of the emission wavelength of self-assembled InAs/InP (001) quantum dots using grown-in defects and ion implantation”, AVS 2004 AVS 51th International Symposium, Anaheim, CA (Novembre 2004).

119. S. Turcotte, S. Larouche, J.-N. Beaudry, N. Shtinkov, L. Martinu, R.A. Masut, R. Leonelli et P. Desjardins, “Optical properties of GaAs1-xNx: A tight-binding and variable-angle spectroscopic ellipsometry study”, AVS 2004 AVS 51th International Symposium, Anaheim, CA, U.S.A. (Novembre 2004).

118. S. Gaudet, C. Lavoie, C. Detavernier et P. Desjardins, “Low resistivity germanides”, AVS 51th International Symposium, Anaheim, CA, U.S.A. (Novembre 2004).

117. F. Schiettekatte, C. Dion, D. Barba, S. Chevobbe, M. Chicoine, V. Aimez, P. Desjardins, R.A. Masut et S. Raymond, “Tuning the emission wavelength of InP-based quantum heterostructures by ion implantation”, 14th International Conference on Ion Beam Modification of Materials, Monterey, Californie (5-10 septembre 2004)

116. P.-L. Girard-Lauriault, M. Iordanova, F. Mwale, P. Desjardins, H. Bourque et M.R. Wertheimer, “Atmospheric pressure deposition of micropatterned N-rich plasma-polymer films for tissue engineering”, Ninth International Symposium on High Pressure, Low Temperature Plasma Chemistry (Hakone IX), Padova, Italy (23-26 Août 2004).

115. O. Duval, L.-P. Lafrance, Y. Savaria et P. Desjardins, “An integrated test platform for nanostructure electrical characterization”, International conference on MEMS, NANO, and smart systems, Banff, Canada (25-27 août 2004)

114. (sur invitation) C. Lavoie, C. Coia, F. M. d’Heurle, C. Detavernier, C. Cabral, Jr., P. Desjardins et A.J. Kellock “Reactive diffusion in the Ni-Si system: phase sequence and formation of metal-rich phases” Sixth International Conference on Diffusion in Materials, 18 - 23 Juillet 2004, Kracovie, Pologne

113. G. Bentoumi, V. Timoshevskii, N. Madini, M. Côté, R. Leonelli, J.-N. Beaudry, P. Desjardins et R.A. Masut, “Absorption edge broadening in GaAsN alloys”, International Conference on the Physics of Semiconductors, Flagstaff, Arizona (26-30 juillet 2004)

112. N. Shtinkov, P. Desjardins et R.A. Masut, “Localized and extended states in semiconductor quantum wells with wire-like interfaces”, International Conference on the Physics of Semiconductors, Flagstaff, Arizona (26-30 juillet 2004)

111. A. Amassian, R. Vernhes, J.E. Klemberg-Sapieha, P. Desjardins et L. Martinu, “Study of the growth and interface engineering of dense/porous SiN1.3 optical coatings by real-time spectroscopic ellipsometry”, in Optical Interference Coatings on CD-ROM, The Optical Society of America, Tucson, Arizona, U.S.A. (27 juin – 2 juillet 2004).

110. A. Amassian, P. Desjardins et L. Martinu, “Dynamics of surface modifications during optical coating deposition in plasma-assisted processes”, in Optical Interference Coatings on CD-ROM, The Optical Society of America, Tucson, Arizona, U.S.A. (27 juin – 2 juillet 2004).

109. F. Schiettekatte, M. Chicoine, S. Chevobbe, D. Barba, V. Aimez, C. Dion, P. Desjardins et S. Raymond, “Controlled modification of quantum heterostructures by ion implantation induced defects”, Congrès 2004 de l'Association canadienne des physicians et physiciennes (ACP), Winnipeg, Manitoba,
(29 mai – 1 juillet 2004).

108. N. Virgilio, B.D. Favis, P. Desjardins, M.-F. Pépin, G. L’Espérance et P. Plamondon, Étude de la structure microscopique et nanoscopique de mélanges de polymères ternaires HDPE/PS/PMMA, 72ième Congrès de l’association canadienne française pour l’avancement des sciences, Montréal, Québec, (10-14 mai 2004).

107. D. Barba, C. Martel, V. Aimez, D. Drouin, J. Beauvais, J. Beerens, D. Morris, P. Desjardins, R.A. Masut, M. Chicoine et F. Schiettekatte, Fabrication de structures laser submicrométriques par implantation ionique à faible énergie, 72ième Congrès de l’association canadienne française pour l’avancement des sciences, Montréal, Québec, (10-14 mai 2004).

106. P.-L. Girard-Lauriault, F. Mwale, M. Iordanova, H. Bourque, P. Desjardins et M.R. Wertheimer, Dépôt de Plasma-Polymère riche en Azote par Décharge à Pression Atmosphérique : Application au Génie Tissulaire Microstructuré, 72ième Congrès de l’association canadienne française pour l’avancement des sciences, Montréal, Québec, (10-14 mai 2004).

105. (sur invitation) P. Desjardins, “Matériaux nanostructurés pour l’électronique et la photonique”, Colloque Nanosciences : défis et prospectives, 72ième Congrès de l’association canadienne française pour l’avancement des sciences, Montréal, Québec, (10-14 mai 2004).

104. A. Amassian, R. Vernhes, J. E. Klemberg-Sapieha, P. Desjardins et L. Martinu, “Interface engineering of porous/dense multilayers of SiN1.3: In situ real-time spectroscopic ellipsometry study”, 47th Annual Technical Conference, Society of Vacuum Coaters, San Francisco, California, U.S.A. (3-8 mai 2004).

103. A. Amassian, R. Vernhes, J. E. Klemberg-Sapieha, P. Desjardins et L. Martinu, “In situ real time spectroscopic ellipsometry study of the growth of dense/porous SiNx multilayer optical thin films”, International Conference on Metallurgical Coatings And Thin Films - ICMCTF 2004, San Diego, California, U.S.A. (19-23 avril 2004)

102. C. Dion, S. Raymond, F. Schiettekatte, N. Shtinkov, P.J. Poole, C. Ni Allen, R.A. Masut et P. Desjardins, “Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing and low-energy ion implantation”, American Physics Society – March Meeting 2004, Montréal, Canada (22-26 mars 2004).

101. P. Wei, S. Tixier, J.-N. Beaudry, M. Chicoine, T. Tiedje, R.A. Masut, P. Desjardins, S. Francoeur, A. Mascarenhas and F. Schiettekatte, “Ion beam characterization of GaAs1-xNx and GaAs1-x-yNxBiy epitaxial layers”, American Physics Society – March Meeting 2004, Montréal, Canada (22‑26 mars 2004).

100. G. Bentoumi, V. Timoshevskii, N. Madini, M. Côté, R. Leonelli, J.-N. Beaudry, P. Desjardins et R.A. Masut, “Evidence for large configuration-induced band gap fluctuations in GaAsN alloys”, American Physics Society – March Meeting 2004, Montréal, Canada (22-26 mars 2004).

99.   D. Bergeron, N. Shtinkov, R.A. Masut et P. Desjardins, “A new Green’s functions method to calculate the electronic properties of wire-like heterostructures”, American Physics Society – March Meeting 2004, Montréal, Canada (22‑26 mars 2004).

98.   D. Barba, C. Martel, V. Aimez, J. Beauvais, D. Drouin, J. Beerens, D. Morris, P. Desjardins et R.A. Masut, “Spatially selective high resolution quantum well intermixing based on low-energy ion implantation and annealing”, Optoelectronic Materials and Devices – Integrated optics: Devices, Materials and Technologies VII, Photonics West 2004, San Jose, CA, U.S.A. (24-29 janvier 2004).

97.   N. Shtinkov, S. Turcotte, J.-N. Beaudry, P. Desjardins, R.A. Masut, G. Bentoumi et R. Leonelli, “Electronic and optical properties of GaAsN/GaAs quantum wells”, AVS 50th International Symposium, Baltimore, MD, U.S.A. (Novembre 2003).

96.   J.-N. Beaudry, G. Bentoumi, S. Guillon, R. Leonelli, R.A. Masut et P. Desjardins, “Nitrogen incorporation and strain relaxation mechanisms during metalorganic vapor phase epitaxy of GaAsN layers on GaAs(001)”, AVS 50th International Symposium, Baltimore, MD, U.S.A. (Novembre 2003).

95.   C. Dion, C. Ni Allen, S. Raymond, P.J. Poole, F. Schiettekatte, R.A. Masut et P. Desjardins, “Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing and low-energy ion implantation”, AVS 50th International Symposium, Baltimore, MD, U.S.A. (Novembre 2003).

94.   C. Coia, C. Lavoie, M. Tremblay, C. Detavernier, F.M. D’Heurle et P. Desjardins, “Ni-Si thin film reactions at low temperatures: Phase identification and sequence characterization”, AVS 50th International Symposium, Baltimore, MD, U.S.A. (Novembre 2003).

93.   T. Spila, P. Desjardins, J. D’Arcy-Gall, R.D. Twesten et J. E. Greene, “Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1-xGex/Si(001) growth from hydride precursors”, AVS 50th International Symposium, Baltimore, MD, U.S.A. (Novembre 2003).

92.   K.A. Bratland, Y.L. Foo, T. Spila, P. Desjardins et J.E. Greene, “Sn-mediated Ge/Ge(001) growth by low-temperature molecular-beam epitaxy: Effects of surface roughening and epitaxial thickness”, AVS 50th International Symposium, Baltimore, MD, U.S.A. (Novembre 2003).

91.   S. Turcotte, N. Shtinkov, P. Desjardins, R.A. Masut et R. Leonelli, “Empirical tight-binding calculations of the electronic structure of dilute III-V-N alloys and heterostructures”, Eleventh Canadian Semiconductor Technology Conference, Ottawa, Août 2003.

90.   J.-N. Beaudry, G. Bentoumi, S. Guillon, R. Leonelli, P. Desjardins et R.A. Masut, “MOVPE growth of GaAs1-xNx-based heterostructures on GaAs(001): Nitrogen incorporation and optical properties”, Eleventh Canadian Semiconductor Technology Conference, Ottawa, Août 2003.

89.   P. Wei, M. Chicoine, J.-N. Beaudry, F. Schiettekatte, P. Desjardins et R.A. Masut, “Characterization of GaAs1-xNx epitaxial layers by ion beam analysis”, Eleventh Canadian Semiconductor Technology Conference, Ottawa (Août 2003).

88.   C. Coia, C. Lavoie, C. Detavernier, M. Tremblay, S. Gaudet et P. Desjardins, “Phase identification and sequence characterization in Ni-Si thin films at low temperature”, 2003 Denver X-ray Conference, (Août 2003).

87.   K.A. Bratland, Y.L. Foo, J.A.N.T Soares, T. Spila, P. Desjardins et J.E. Greene “Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy”, Gordon Conference on Thin Film and Crystal Growth Mechanisms, South Hadley, Massachusetts (juin 2003).

86.   K.A. Bratland, Y.L. Foo, J.A.N.T. Soares, T. Spila, P. Desjardins et J.E. Greene, “Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy”, Surface Analysis 2003, Urbana, Illinois (juin 2003)

85.   T. Spila, P. Desjardins, H. Kim, M. Sardela, R. Twesten, D. G. Cahill et J. E. Greene, “Reaction paths for self-organized surface roughening of Si1-xGex alloys during hydride gas-source molecular beam epitaxy, Surface Analysis 2003, Urbana, Illinois (juin 2003)

84.   A. Amassian, P. Desjardins et L. Martinu, “In situ real-time spectroscopic ellipsometry monitoring of thin film growth”, UNY-VAC Symposium on Functional Coatings and Surface Engineering – FCSE 2003, Montréal (juin 2003).

83.   R. Taillefer, P. Desjardins et F. Schiettekatte, “A finite element model of ultra-sensitive thin film nanocalorimeters for the study of size-dependent thermodynamic properties of materials”, NEWCAS’2003, Montréal (juin 2003).

82.   A. Amassian, P. Desjardins et L. Martinu, “Analysis and control of TiO2 film growth by PECVD using in situ real-time spectroscopic ellipsometry”, International Conference on Metallurgical Coatings and Thin Films, San Diego (avril 2003).

81.   N. Shtinkov, P. Desjardins et R.A. Masut, “Lateral confinement of carriers in ultra thin semiconductor quantum wells”, The Fourth International Conference on Low Dimensional Structures and Devices, Brésil (décembre 2002).

80.   Y. L. Foo, K. A. Bratland, B. Cho, P. Desjardins et J.E. Greene, “Si1-yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3 : surface reaction paths and growth kinetics”, MRS Fall Meeting, Boston, MA, U.S.A. (décembre 2002).

79.   K.A. Bratland, Y.L. Foo, J.A.N.T. Soares, T. Spila, J. D’Arcy-Gall, P. Desjardins, J.E. Greene, “Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy”, AVS 49th International Symposium, Denver, CO, U.S.A., (novembre 2002).

78.   Y.L. Foo, K.A. Bratland, B. Cho, P. Desjardins, J.E. Greene, “Si1-yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: surface reaction paths and growth kinetics”, AVS 49th International Symposium, Denver, CO, U.S.A., (novembre 2002).

77.   A. Tchebotareva, S. Roorda, J. L. Brebner, P. Desjardins, and C. W. White, “Thermal evolution and optical properties of in and as implanted Si”, 13th International Conference on Ion Beam Modification of Materials, Kobe, Japan, (septembre 2002).

76    J.E. Paultre, P. Desjardins, R.A. Masut, “Kinematical x-ray scattering theory of self-assembled quantum dot arrays and superlattices”, XIX Congress of the International Union of Crystallography, Genève, Suisse, (août 2002).

75.   C. Lavoie, C. Coia, R. Purtell, P. Desjardins, J. Jordan-Sweet, C. Cabral Jr., F.M. d’Heurle, J.M.E. Harper, “In situ monitoring of thi film reactions during RTA : nickel silicide formation”, 201st meeting of the Electrochemical Society Inc., Philadelphia, Pa, (mai 2002).

74.   A. Verdy, P. Desjardins et F. Schiettekatte, “Formation de siliciure de cobalt par implantation ionique dans Si(100)” 70ième Congrès de l’association canadienne française pour l’avancement des sciences, Québec, Qc, (mai 2002).

73.   A. Amassian, S. Larouche, R. Vernhes, J. E. Paultre, J. Klemberg-Sapieha, P. Desjardins et L. Martinu, “Analysis and control of optical film growth by in situ real-time spectroscopic ellipsometry”, OptoCanada, Ottawa, ON, (mai 2002).

72.   A. Amassian, J.-E. Paultre, S. Larouche, J. Klemberg-Sapieha, P. Desjardins et L. Martinu, “In situ ellipsometric study of the initial growth of a-TiO2 deposited by PECVD”, 45th SVC Technical Conference, Lake Buena Vista, FL, (avril 2002).

71.   K.A. Bratland, J.A.N.T. Soares, Y.L. Foo, T. Spila, P. Desjardins et J.E. Greene, “Mechanism for epitaxial breakdown during low-temperature Ge(001) MBE”, Annual APS March Meeting 2002, Indianapolis, IN, (mars 2002).

70.   T. Spila, P. Desjardins, H.Kim, N. Taylor, D.G. Cahill, S. Guillon, R.A. Masut et J.E. Greene, “Hydrogen-mediated surface morphological evolution in Si0.7Ge0.3/Si(001) layers grown by hydride gas-source molecular beam epitaxy”, Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-technologies, NATO Advanced Study Institute, Kaunas, Lithuania, (septembre 2001).

69.   A. Amassian, S. Larouche, J.E. Paultre, B. Baloukas, J. E. Klemberg-Sapieha, P. Desjardins et L. Martinu, “In situ and ex situ studies of the initial growth of TiO2 deposited by PECVD”, Annual Symposium of the Upstate New York Chapter of the American Vacuum Society, Montréal, Canada, (septembre 2001).

68.   (sur invitation) P. Desjardins, “Semiconductor thin film epitaxial growth under highly kinetically constrained conditions”, Annual meeting of the Canadian Association of Physicists, Victoria, Canada, (juin 2001).

67.   J.F. Girard, S. Raymond, S. Poirier, D. Labrie, P. Poole, R. Masut, P. Desjardins et H. Marchand, “Interdiffusion des points quantiques InAs/InP”, 69e Congrès de l’Association canadienne française pour l’avancement des sciences, Université de Sherbrooke, (mai 2001).

66.   S.Y. Park, J.A.N.T. Soares, D. Gall, Y.-W. Kim, H. Kim, J.E. Greene, P. Desjardins et S.G. Bishop, “Carbon lattice site distributions in epitaxial Si1-yCy grown on Si(001) by molecular beam epitaxy: An x-ray diffraction, ab initio calculation, and photoluminescence study”, Materials Research Society, 2001 Spring Meeting, San Francisco, California, (mai 2001).

65.   H. Kim, G. Glass, A. Vailionis, P. Desjardins et J.E. Greene, “Boron surface segregation and film growth kinetics during ultra‑highly doped Si1‑xGex(001):B gas-source molecular beam epitaxy”, Materials Research Society, 2001 Spring Meeting, San Francisco, California, (mai 2001).

64.   M. Chicoine, R.A. Masut, S. Roorda, P. Desjardins et C. Beaudoin, “Implementation of ion implantation for III-V compliant substrates”, Tenth Biennial Organometallic Vapor Phase Epitaxy Workshop of the Minerals, Metals and Materials Society (TMS), San Diego, CA, (mars 2001).

63.   J. D’Arcy-Gall, D. Gall, I. Petrov, P. Desjardins et J.E. Greene, “C lattice site distributions in epitaxial Ge1-yCy/Ge(001) layers”, 11th European workshop on molecular-beam epitaxy, Germany, (février 2001).

62.   (sur invitation) J.E. Greene, S. Kodambaka, P. Desjardins, A. Vailionis, V. Petrova, I. Petrov et D.G. Cahill, “Microstructural and surface morphological evolution at the atomic scale during the growth of polycrystalline TiN: a HR-TEM, XRD, STM, and modeling study”, Materials Research Society 2000 Fall Meeting, Boston, Massachusetts, (décembre 2000).

61.   D. Labrie, S. Raymond, S. Awirothananon, S. Fafard, G.C. Aers, H. Marchand, L. Isnard, P. Desjardins, S. Guillon et R.A. Masut, “Tuning of the electronic properties of InAs/InP quantum dots using rapid thermal annealing”, Symposium J: Semiconductor quantum dots, Materials Research Society 2000 Fall Meeting, Boston, Massachusetts, (décembre 2000).

60.   (sur invitation) I. Petrov, S. Kodambaka, P. Desjardins, A. Vailionis, V. Petrova, D. Cahill et J.E. Greene, “Microstructural and surface morphological evolution at the atomic scale during the growth of polycrystalline TiN: a HR-TEM, XRD, STM, and modeling study”, IUVSTA Workshop on Selective and Functional Film Deposition Technologies Applied to ULSI Technology, Mie, Japan, (novembre 2000).

59.   (sur invitation) J.E. Greene, S. Kodambaka, P. Desjardins, A. Vailionis, V. Petrova, I. Petrov et D. Cahill, “Microstructural and surface morphological evolution at the atomic scale during the growth of polycrystalline TiN: a HR-TEM, XRD, STM, and modeling study”, International Conference on Materials and Technology, Portoroz, Slovenia, (octobre 2000).

58.   H. Kim, G. Glass, J.A.N.T. Soares, P. Desjardins et J.E. Greene, “Si(001):As gas-source molecular beam epitaxy: Incorporation and film growth kinetics”, American Vacuum Society, 47th National Meeting, Boston, Massachusetts, (octobre 2000).

57.   J.G. D’Arcy-Gall, D. Gall, P. Desjardins, I. Petrov et J.E. Greene, “C incorporation during the growth of Ge1-yCy/Ge(001) from hyperthermal beams”, American Vacuum Society, 47th National Meeting, Boston, Massachusetts, (octobre 2000).

56.   (sur invitation) J.E. Greene, S. Kodambaka, P. Desjardins, A. Vailionis, V. Petrova, I. Petrov et D. Cahill, “Microstructural and surface morphological evolution at the atomic scale during the growth of polycrystalline TiN: a HR-TEM, XRD, STM, and modeling study”, International Conference on Coatings on Glass, Maastricht, Netherlands, (octobre 2000).

55    (sur invitation) J.E. Greene, S. Kodambaka, P. Desjardins, A. Vailionis, V. Petrova, I. Petrov et D. Cahill, “Microstructural and surface morphological evolution at the atomic scale during the growth of polycrystalline TiN: a HR-TEM, XRD, STM, and modeling study”,  8th International Conference on Plasma Surface Engineering, Garmisch, Germany, (septembre 2000).

54.   A. Vailionis, B. Cho, G. Glass, P. Desjardins, D.G. Cahill et J.E. Greene, “Pre-dots: Kinetic pathway between wetting layer and coherent Ge island growth on Si(001)”, Symposium K: Morphological and compositional evolution in heteroepitaxial semiconductor thin films, Materials Research Society 2000 Spring Meeting, San Francisco, California, (avril 2000).

53.   (sur invitation) J.E. Greene, S. Kodambaka, P. Desjardins, A. Vailionis, V. Petrova, I. Petrov et D.G. Cahill, “Microstructural and surface morphological evolution at the atomic scale during the growth of polycrystalline TiN: a HR-TEM, XRD, STM, and modeling study”, The US-Japan Seminar on Mesoscopic Phenomena on Surfaces (SMPS), Park City, Utah, (avril 2000).

52.   (sur invitation) J.E. Greene, S. Kodambaka, P. Desjardins, A. Vailionis, V. Petrova, I. Petrov, and D. Cahill, “Microstructural and surface morphological evolution at the atomic scale during the growth of polycrystalline TiN: a HR-TEM, XRD, STM, and modeling study”, American Physical Society, Minneapolis, (mars 2000).

51.   (sur invitation) P. Desjardins, M. Beaudoin, R.Y.-F. Yip et R.A. Masut, “InAsP/(Ga)InP multiple quantum well structures on InP(001) for infrared applications : Optical and structural properties, quantum-confined Stark-effect optical modulators, and band alignment engineering”, Symposium OO : Infrared applications of semiconductors III, 1999 MRS Fall Meeting, Boston, Massachusetts, (décembre 1999).

50.   (sur invitation) I. Petrov, S. Kodambaka, P. Desjardins, A. Vailionis, V. Petrova et J.E. Greene, “Microstructural and surface morphological evolution at the atomic scale during the growth of polycrystalline TiN: a HR-TEM, XRD, STM, and modeling study”, American Vacuum Society, 46th National Meeting, Seattle, Washington, (octobre 1999).

49.   T. Spila, P. Desjardins, H. Kim, N. Taylor, D.G. Cahill, J.E. Greene, S. Guillon et R.A. Masut, “Hydrogen-mediated surface morphological evolution in Si0.7Ge0.3/Si(001) layers grown by hydride gas-source molecular-beam epitaxy”, American Vacuum Society, 46th National Meeting, Seattle, Washington, (octobre 1999).

48.   S. Kodambaka, P. Desjardins, A. Vailionis, I. Petrov, J.E. Greene et D. Chopp, “TiN(001) epitaxy : An in situ temperature-dependent STM and level-set modeling study”, American Vacuum Society, 46th National Meeting, Seattle, Washington, (octobre 1999).

47.   (sur invitation) J.E. Greene, S. Kodambaka, P. Desjardins, A. Vailionis, V. Petrova, I. Petrov et D.G. Cahill, “Microstructural and surface morphological evolution at the atomic scale during the growth of polycrystalline TiN: a HR-TEM, XRD, STM, and modeling study”, 11th International Conference on Thin Films, Cancuun, Mexique, (septembre 1999).

46.   (sur invitation) J.E. Greene, S. Kodambaka, P. Desjardins, A. Vailionis, V. Petrova, I. Petrov et D.G. Cahill, “Microstructural and surface morphological evolution at the atomic scale during the growth of polycrystalline TiN : a HR-TEM, XRD, STM, and modeling study”, 1999 MRS Workshop Series, Advances in thin film simulations and experimental verification, San Jose, Californie, (juin 1999).

45.   D. Chopp, S. Kodambaka, P. Desjardins, A. Vailionis, I. Petrov et J.E. Greene, “Mechanisms, activation barriers, and modeling of microstructural and surface morphological evolution during TiN deposition”, 1999 MRS Workshop Series, Advances in Thin Film Simulations and Experimental Verification, San Jose, Californie, (juin 1999).

44.   S. Guillon, P. Desjardins, R.Y-F. Yip et R.A. Masut, “Épitaxie en phase vapeur aux organométalliques de multicouches In1‑xGaxAsyP1‑y/InAszP1-z cohérentes sur InP(001) avec PH3/TBAs : Propriétés structurales, propriétés optiques et incorporation des élements III et V”, Neuvième conférence canadienne sur la technologie des semi-conducteurs, Ottawa, Canada, (août 1999).

43.   (sur invitation) P. Desjardins, “Alliages de semi-conducteurs du groupe IV pour la microélectronique et l’optoélectronique”, Colloque Optique, laser, photonique, semi-conducteurs et nanostructures, 67e congrès annuel de l’Association canadienne française pour l’avancement des sciences, Ottawa, (mai 1999).

42.   A. Vailionis, G. Glass, P. Desjardins, D.G. Cahill et J.E. Greene, “Electrically active and inactive B lattice sites in ultra-highly B doped Si(001): An x-ray near-edge fine-struture and high-resolution diffraction study”, Symposium S: Si front-end processing – Physics and technology of dopant-defect interactions, Materials Research Society 1999 Spring Meeting, San Francisco, Californie, (avril 1999).

41.   (sur invitation) J.E. Greene, S. Kodambaka, M. Wall, V. Petrova, P. Desjardins, A. Vailionis, B.W. Karr, I. Petrov et D.G. Cahill, “Mechanisms and activation barriers controlling grain size, size distribution, and texture evolution during TiN sputter deposition”, International Conference on Metallurgical Coatings and Thin Films, San Diego, Californie, (avril 1999).

40.   (sur invitation) J.E. Greene, I. Petrov, P. Desjardins, D.G. Cahill, J.-S. Chun, D. Gall, B. Karr, Y.‑W. Kim, V. Petrova, S. Kodambaka, D. Bergstrom, F. Adibi, S. Rossnagel, G.H. Gilmer et T. de la Rubia, “Microstructural and surface morphological evolution during growth of transition-metal nitrides : Role of low-energy ion/surface interactions”, Materials Research Society, Fall Meeting, Boston, Massachusetts, (décembre 1998).

39.   N. Taylor, T. Spila, P. Desjardins et J.E. Greene, “Strain and surface roughness in Si1‑xGex/Si(011) thin films”, American Vacuum Society, 45th National Meeting, Baltimore, Maryland, (novembre 1998).

38.   G. Glass, H. Kim, A. Vailionis, J.A.N.T. Soares, P. Desjardins et J.E. Greene, “Ultra-high B and As doping during Si(001) gas-source molecular beam epitaxy: Growth kinetics, dopant-incorporation, and electrical activation”, American Vacuum Society, 45th National Meeting, Baltimore, (novembre 1998).

37.   N. Taylor, H. Kim, T. Spila, J.A. Eades, G. Glass, P. Desjardins et J.E. Greene, “Si1‑xGex/Si(110) : Film growth kinetics and surface morphology”, TechCon 1998, Las Vegas, Nevada, (septembre 1998).

36.   N. Taylor, H. Kim, T. Spila, J.A. Eades, J.R.A. Carlsson, G. Glass, P. Desjardins et J.E. Greene, “Gas-source molecular beam epitaxy of Si1-xGex on Si(011): Surface structure and growth kinetics”, American Vacuum Society, 44th National Meeting, San Jose, Californie, (octobre 1997).

35.   S. Fafard, J. McCaffrey, Y. Feng, C.N. Allen, H. Marchand, L. Isnard, P. Desjardins, S. Guillon et R.A. Masut, “Quantum dot laser diodes emitting at 1.5 µm”, International Conference on Applications of Photonics Technology (SPIE), Ottawa, Canada, (juillet 1997).

34.   G. Glass, H. Kim, P. Desjardins, M.R. Sardela Jr., O. Gurdal, N. Taylor, T. Spila et J.E. Greene, “Ultra-high B doping during Si(001) gas-source molecular beam epitaxy: Growth kinetics, B-incorporation, strain, and electrical activation”, American Vacuum Society, 44th National Meeting, San Jose, Californie (20-24 octobre 1997).

33.   T. Spila, P. Desjardins, N. Taylor, D.G. Cahill, J.E. Greene, S. Guillon et R.A. Masut, “Surface morphological evolution of Si0.7Ge0.3/Si(001) structures grown by gas-source molecular beam epitaxy”, American Vacuum Society, 44th National Symposium, San Jose, Californie (octobre 1997).

32.   N. Taylor, H. Kim, T. Spila, J.A. Eades, J.R.A. Carlsson, G. Glass, P. Desjardins et J.E. Greene, “Gas-source molecular beam epitaxy of Si1-xGex on Si(011): Surface structure and growth kinetics”, SRC Graduate Fellowship Program Annual Conference, Santa Clara, Californie (septembre 1997).

31.   G. Glass, H. Kim, P. Desjardins, M.R. Sardela Jr., O. Gurdal, N. Taylor, T. Spila et J.E. Greene, “Ultra-high B doping during Si(001) gas-source molecular beam epitaxy: Growth kinetics, B-incorporation, strain, and electrical activation”, SRC Graduate Fellowship Program Annual Conference, Santa Clara, Californie (septembre 1997).

30.   P. Desjardins, H. Marchand, L. Isnard et R.A. Masut, “Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001)”, Huitième conférence canadienne sur la technologie des semi-conducteurs, Ottawa, Canada (août 1997).

29.   H. Marchand, P. Desjardins, S. Guillon et R.A. Masut, “Morphological evolution of InAs strained layers deposited on InP(001) by metalorganic vapor phase epitaxy”, Huitième conférence canadienne sur la technologie des semi-conducteurs, Ottawa, Canada (août 1997).

28.   R.Y-F. Yip, P. Desjardins, A. Aït-Ouali, L. Isnard, H. Marchand, A. Bensaada, J.L. Brebner, J.F. Currie et R.A. Masut, “Band alignment and barrier height considerations for the quantum-confined Stark effect”, Huitième conférence canadienne sur la technologie des semi-conducteurs, Ottawa, Canada (août 1997).

27.   S. Guillon, R.Y-F. Yip, Z. Bougrioua, M. Beaudoin, M. Chicoine, P. Desjardins et R.A. Masut, “Épitaxie en phase vapeur aux organométalliques de InGaAsP/In(As)P sur InP(001)”, Huitième conférence canadienne sur la technologie des semi-conducteurs, Ottawa, Canada (août 1997).

26.   S.C. Gujrathi, S. Roorda, J.G. D’Arcy, R.J. Pflueger, P. Desjardins, I. Petrov et J.E. Greene, “Quantitative compositional depth profiling of Si1-x-yGexCy thin films by simultaneous elastic recoil detection and Rutherford backscattering spectrometry”, 13th International Conference on Ion-Beam Analysis, Lisbonne, Portugal (juillet 1997).

25.   B.W. Karr, I. Petrov, P. Desjardins, D.G. Cahill et J.E. Greene, “In-situ scanning tunneling microscopy studies of the evolution of surface morphology and microstructure in epitaxial TiN(001) grown by ultra-high-vacuum reactive magnetron sputtering”, International Conference on Metallurgical Coatings and Thin Films, San Diego, Californie (avril 1997).

24.   H. March, P. Desjardins, S. Guillon, J.-E. Paultre, Z. Bougrioua, R. Yip et R.A. Masut, “Growth and characterization of self-assembled InAs/InP(001) nanometer-sized coherent islands by metalorganic vapor phase epitaxy”, Eight biennal workshop on organometallic vapor phase epitaxy, Dana Point, Californie (avril 1997).

23.   O. Gurdal, P. Desjardins, J.R.A. Carlsson, N. Taylor, J.E. Greene, H.H. Radamson, J.‑E. Sundgren et G.V. Hansson, “Growth of single crystal metastable Ge1-xSnx alloys and superlattices on Ge(001)2x1 by molecular beam epitaxy”, Symposium B: Epitaxial growth – Principles and applications, Materials Research Society 1997 Spring Meeting, San Francisco, Californie (avril 1997).

22.   P. Desjardins, H. Marchand, L. Isnard, Y. Ababou, G. L’Espérance, A. Yelon, et R.A. Masut, “Caractérisation de la transition rugueuse dans les hétérostructures à contraintes compensées GaInP/InAsP déposées sur InP(001) par épitaxie en phase vapeur aux organo-métalliques”, Surfaces et interfaces des matériaux avancés, Montréal, Québec, Canada (octobre 1996).

21.   P. Desjardins et J. E. Greene, “Step-flow epitaxial growth on two-domain surfaces”, Surfaces et interfaces des matériaux avancés, Montréal, Québec, Canada (octobre 1996).

20.   H. Marchand, P. Desjardins, L. Isnard, G. Létourneau, R. Leonelli, G. L’Espérance et R.A. Masut, “Épitaxie en phase vapeur aux organométalliques de InAs/InP : évolution morphologique de la surface et formation de nanostructures auto-organisées”, Surfaces et interfaces des matériaux avancés, Montréal, Québec, Canada (octobre 1996).

19.   Y. Ababou, P. Desjardins, R.A. Masut, A. Yelon et G. L’Espérance, “Metalorganic vapor phase epitaxy and structural characterization of InP on Si(111)”,Septième conférence canadienne sur la technologie des semi-conducteurs, Ottawa, Canada (août 1995).

18.   P. Desjardins, M. Beaudoin, A. Bensaada, R.A. Masut, A. Chennouf, R. Leonelli, R.W. Cochrane, J.L. Brebner et G. L’Espérance, “Strain relaxation in compressive InAsP/InP and tensile GaInP/InP multilayers : a comparative study of structural and optical properties”, Septième conférence canadienne sur la technologie des semi-conducteurs, Ottawa, Canada (août 1995).

17.   M. Beaudoin, P. Desjardins, A. Bensaada, R. Leonelli, R.A. Masut, L. Isnard, A. Chennouf et G. L’Espérance, “Propriétés optiques et structurales de puits quantiques sous contraintes InAsxP1-x/InP obtenus par LP-MOVPE”, Septième conférence canadienne sur la technologie des semi-conducteurs, Ottawa, Canada (août 1995).

16.   Y. Ababou, P. Desjardins, A. Chennouf, R.A. Masut, A. Yelon, R. Leonelli et G. L’Espérance, “Growth of strain-balanced GaInP/InAsP MQW by LP-MOVPE”, 6th European workshop on MOVPE and related techniques, Gent, Belgique (août 1995).

15.   A. Bensaada, M. Suys, M. Beaudoin, P. Desjardins, L. Isnard, A. Aït-Ouali, R.A. Masut, R.W. Cochrane, J.F. Currie et G. L’Espérance, “LP-MOVPE growth and characterization of InxGa1‑xAs/InP epilayers and multiple quantum wells using tertiarybutylarsine”, 6th European Workshop on MOVPE and Related Techniques, Gent, Belgique (juin 1995).

14.   M. Beaudoin, R.A. Masut, L. Isnard, P. Desjardins, A. Bensaada, G. L'Espérance et R. Leonelli, “Band offsets of InAsxP1-x/InP strained multiple quantum wells grown by LP-MOVPE using TBAs”, Materials Research Society, 1993 Fall Meeting, Boston, Massachusetts (décembre 1994).

13.   M. Meunier, R. Izquierdo, M. Tabbal, S. Evoy, P. Desjardins, M.‑H. Bernier, J. Bertomeu, N. Elyaagoubi, M. Suys, E. Sacher et A. Yelon, “Laser induced deposition of tungsten and copper”, Engineering Foundation Conference on Laser Processing, Florida (mai 1994).

12.   (sur invitation) M. Meunier, R. Izquierdo, P. Desjardins, M. Tabbal et M. Suys, “Excimer laser for in situ processing in microelectronics”, NATO Advanced Study Institute on Excimer lasers : The tools, fundamentals of their interactions with matter, fields of application, Elounda, Grèce (septembre 1993).

11.   S. Evoy, M.-H. Bernier, P. Desjardins, R. Izquierdo, M. Meunier et E. Sacher, “Diode laser induced pyrolytic decomposition of spin-coated organometallic thin films”, SPIE 1993 International Symposium on Holography, Microstructures, and Laser Technologies, Symposium on laser-assisted fabrication of thin films and microstructures, Québec, Canada (août 1993).

10.   R. Izquierdo, P. Desjardins, N. Elyaagoubi et M. Meunier, “Laser-assisted low temperature deposition of WSix from WF6 and SiH4”, Materials Research Society, 1992 Fall Meeting, Symposium E, Boston, Massachusetts (décembre 1992).

9.     P. Desjardins, R. Izquierdo, N. Elyaagoubi et M. Meunier, “Dépôt par laser de WSix sur du TiN à partir de WF6 et de SiH4”, 6e Conférence canadienne sur la technologie des semi-conducteurs, Ottawa, Canada, (août 1992).

8.     P. Desjardins, R. Izquierdo et M. Meunier, “Dépôt de siliciures de tungstène stimulé par diode laser”, 60e Congrès de l'ACFAS, Université de Montréal, Montréal, Canada, (mai 1992).

7.     P. Desjardins, R. Izquierdo et M. Meunier, “Diode laser induced chemical vapor deposition of WSix on TiN from WF6 and SiH4”, NATO ASI Workshop on In Situ Processing, Viana do Castello, Portugal, (mai 1992).

6.     M. Meunier, R. Izquierdo et P. Desjardins, “Laser processing for Si microelectronics”, First CMOS Characterization Workshop, Northern Telecom Electronics, Ottawa, Canada, (décembre 1991).

5.     P. Desjardins, R. Izquierdo et M. Meunier, “Diode laser induced chemical vapor deposition of WSix from WF6 and SiH4 on TiN”, Materials Research Society, 1991 Fall Meeting, Boston, Massachusetts, (décembre 1991).

4.     M. Meunier, C. Lavoie, S. Boivin, R. Izquierdo et P. Desjardins,  “Modeling KrF excimer laser induced deposition of titanium from titanium tetrachloride”, European Materials Research Society, 1991 Spring Meeting, Strasbourg, France, (mai 1991).

3.     M. Meunier, C. Lavoie, S. Boivin, R. Izquierdo, P. Desjardins et S.I. Najafi, “KrF excimer laser direct writing of titanium lines: Modeling and application to the fabrication of Ti:LiNbO3 waveguides”, Materials Research Society, 1990 Fall Meeting, Boston, Massachusetts, (novembre 1990).

2.     C. Lavoie, M. Meunier, R. Izquierdo, S. Boivin et P. Desjardins, “Modeling excimer laser induced deposition of titanium from TiCl4”, American Vacuum Society, 37th National Symposium, Toronto, Canada, (octobre 1990).

1.     M. Meunier, R. Izquierdo, C. Lavoie, A. Lecours, S. Boivin et P. Desjardins, “Laser processing for microelectronics and optoelectronics”, 5e Conférence Canadienne sur la Technologie des Semi-conducteurs, Ottawa, Canada, (août 1990).

Séminaires sur invitation

22.   P. Desjardins, “Les nanotechnologies : mythes et réalités ”, Ordre des ingénieurs du Québec – Régionale de l’Outaouais, Gatineau, (25 novembre 2004).

21.   P. Desjardins, “Extending Moore’s law ‘forever’: From microelectronics to nanoelectronics”, Conférences mensuelles du chapitre McGill de Sigma Xi, Janvier 2004

20.   P. Desjardins, “Les nanotechnologies : mythes, réalités et impacts sur l’industrie chimique”, Souper-conférence de l’Association pour le développement de l’industrie chimique au Québec (ADICQ) (27 novembre 2003).

19.     P. Desjardins, “Contrôle de la synthèse des couches minces à l’échelle atomique : Hétérostructures et nanostructures”, Département de physique, Université Laval, Québec (20 mars 2003).

18.   P. Desjardins, “ Les nanotechnologies: mythes et réalités”, Rencontre-privilège du CRIM, Montréal (13 mars 2003).

17.   P. Desjardins, “Les nanotechnologies: mythes et réalités”, École Polytechnique : 2e journée de la recherche, Montréal (20 février 2003).

16.   P. Desjardins, “Contrôle de la synthèse des couches minces à l’échelle atomique : Hétérostructures et nanostructures”, Institut National de Recherche Scientifique : Énergie et matériaux, Varennes (22 Novembre 2002)

15.   P. Desjardins, “Thin film synthesis under highly kinetically constrained conditions”, Département de chimie, Université McGill (28 mars 2002).

14.   P. Desjardins, “L’ingénierie des matériaux électroniques : du 80486 au Pentium XII”, La semaine de la physique, École Polytechnique de Montréal (29 janvier 2002).

13.   P. Desjardins, “Contrôle de la synthèse des couches minces à l’échelle atomique : Hétérostructures et nanostructures”, Institut des matériaux industriels, Conseil National de Recherche du Canada, Boucherville (18 mai 2001).

12.   P. Desjardins, “Synthèse de couches minces épitaxiales dans des conditions fortement hors équilibre”, Département de physique, Université de Montréal (10 novembre 2000).

11.   P. Desjardins, “Synthèse de couches minces épitaxiales dans des conditions fortement hors équilibre”, Centre de recherche sur les propriétés électroniques des matériaux avancés (CERPEMA), Université de Sherbrooke (26 juillet 2000).

10.   P. Desjardins, “Thin film epitaxial growth under highly kinetically constrained conditions”, Institute for Microstructural Sciences, National Research Council of Canada, Ottawa (14 mai 1999).

9.     P. Desjardins, “Synthèse de couches minces épitaxiales dans des conditions fortement hors équilibre”, Département de génie physique et de génie des matériaux, École Polytechnique de Montréal (22 avril 1999).

8.     P. Desjardins, “High-resolution x-ray diffraction of semiconductor heterostructures”, Thin Film Group, University of Illinois at Urbana-Champaign (10 mars 1999).

7.     P. Desjardins, “Structural and optical properties InAsP/InGaP multilayers and self-assembled InAs nanostructures on InP(001)”, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign (3 février 1999).

6.     P. Desjardins, “Épitaxie d’alliages de semi-conducteurs du groupe IV”, Département de génie physique, École Polytechnique de Montréal (26 mars 1998).

5.     P. Desjardins, “La physique des couches minces: la recherche appliquée pour l’industrie microélectronique”, Département de génie physique et “La semaine de la physique 1996”, École Polytechnique de Montréal (26 janvier 1996).

4.     P. Desjardins, M. Beaudoin, R. Leonelli, R.A. Masut et G. L’Espérance, “Propriétés structurales et optiques de couches minces de semi-conducteurs III-V fabriquées par MOCVD”, Département de génie physique, École Polytechnique de Montréal (24 novembre 1995).

3.     P. Desjardins, “Contraste de diffraction en microscopie électronique en transmission : application aux hétérostructures contraintes”, Département de génie physique, École Polytechnique (24 avril 1995).

2.     P. Desjardins et J.E. Greene, “Croissance épitaxiale par propagation des marches (step-flow) sur les surfaces mono- et double-domaine”, Département de génie physique, École Polytechnique (28 février 1995).

1.     P. Desjardins, “Dépôt de WSix sur TiN stimulé par diode laser”, Groupe des couches minces et Département de génie physique, École Polytechnique (9 mars 1992).

 


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