Interface Study of Hydrogenated Amorphous Silicon Nitride on Hydrogenated Amorphous Silicon by X Ray Photoelectron Spectroscopy,
M. Beaudoin, C. J. Arsenault, R. Izquierdo et M. Meunier,
Appl. Phys. Lett. 55, 2640 2642 (1989).
Keywords : Interface study, amorphous silicon, x-ray spectroscopy

Amorphous Silicon Static Induction Transistor,
M. Meunier, M. Bisson et M. Kemp,
J. Non Cryst. Solids, 115, 108 110 (1989).
Keywords : Amorphous silicon, transistor, microelectronics

Proposed New Resonant Tunneling Structures with Impurity Planes of Deep Levels in Barriers,
C. J. Arsenault et M. Meunier,
J. Appl. Phys. 66, 4305 4311 (1989)
Keywords : resonant tunnelling structures, impurity planes of deep levels (IPDL)

Fabrication and Characterization of the Amorphous Silicon Static Induction Transistor,
M. Bisson, M. Kemp et M. Meunier,
IEEE Trans. on Elect. Devices, ED 36, 2844 2847 (1989).
Keywords : Amorphous silicon, transistor, microelectronics

Resonant Tunneling Lifetime Comparison Between Double Barrier and d Doped Barrier Structures,
C. J. Arsenault et M. Meunier,
Phys.Rev.B39, 8739 8742(1989).
Keywords :

CF4/Ar Reactive Ion Etching of Gallium Arsenide,
P. Lussier, M. Bélanger, M. Meunier et J. F. Currie,
J. Can. Phys. 67, 259 261 (1989).
Keywords : reactive ion etching, diode, Schottky barrier

Simulation of the Amorphous Silicon Static Induction Transistor,
M. Kemp, M. Meunier, C. G. Tannous,
Solid State Electronics 32, 149 157 (1989).
Keywords : amorphous silicon, transistor, microelectronics

Amorphous Silicon Static Induction Transistor,
M. Meunier, M. Bisson et M. Kemp,
APS March Meeting (1989). Bull. of the American Physical Society 34, No. 3, p. 466 (1989).
Keywords :

Proposed New Resonant Tunneling Structures with d Doped Barriers,
C. J. Arsenault et M. Meunier,
APS March Meeting 1989. Bull. of the Amer. Phys. Society 34, No. 3, p. 779 (1989).
Keywords :